KIOXIA Honored by FMS With Lifetime Achievement Award for 3D NAND Flash Invention

Company’s Engineering Team Recognized for Creation of Groundbreaking BiCS FLASH^TM 3D Flash Memory Technology

KIOXIA Honored by FMS With Lifetime Achievement Award for 3D NAND Flash Invention

Company Contact:
Mia Cool
KIOXIA America, Inc.
Tel: (408) 526-3087
mia.cool@kioxia.com

Media Contact:
Dena Jacobson
Lages & Associates
Tel: (949) 453-8080
dena@lages.com

KIOXIA, the inventor of NAND flash memory, is the recipient of the FMS: the Future of Memory and Storage Lifetime Achievement Award for 2024. The KIOXIA engineering team, consisting of Hideaki Aochi, Ryota Katsumata, Masaru Kito, Masaru Kido, and Hiroyasu Tanaka, will accept this prestigious award for its pioneering work in developing and commercializing 3D flash memory. This breakthrough technology has become fundamental to a wide range of storage applications – including advanced smartphones, PCs, SSDs, data centers, AI, and industrial.

KIOXIA presented the concept of BiCS FLASH^TM 3D flash memory technology at the VLSI Symposium in 2007. After announcing the prototype, KIOXIA continued development to optimize the technology for mass production, eventually introducing the world’s first¹ 256 gigabit (Gb), 48-layer 3D flash memory in 2015.

"KIOXIA’s innovation in 3D flash memory has revolutionized data storage, transforming it from a mere advancement of existing technologies into a groundbreaking solution that meets the demands of modern computing," said Chuck Sobey, FMS General Chair. "We are delighted to showcase this important contribution and look forward to seeing what the future holds."

With a 3D stacked structure that boosts capacity and performance, BiCS FLASH™ 3D flash memory has been a transformational force in the storage industry. The technology has enabled higher density storage solutions while delivering reliability and efficiency, significantly enhancing the capabilities of data centers, consumer electronics, and mobile devices – and setting a new standard for flash memory technology. By leveraging vertical stacking, KIOXIA addressed the limitations of planar NAND flash, paving the way for future developments in memory storage solutions - and reinforcing KIOXIA Corporation as an industry leader.

"KIOXIA’s technical innovation in 3D flash memory cannot be overstated,” said Atsushi Inoue, vice president and technology executive for KIOXIA Corporation’s Memory Division. “Our technology has set new standards in the industry, enabling flash memory to vastly increase storage density per cell, die and package. I am excited to see our achievements recognized and look forward to witnessing their continued influence in the years to come."

"My fellow KIOXIA engineers are an inspiration not only for their technological accomplishments but also for their commitment to advancing the field through continuous innovation and support for the technologists around them,” said Ryota Katsumata, senior fellow of the Advanced Memory Development Center for KIOXIA Corporation. “Our contributions have not only made a reverberating impact, but have also fostered a spirit of innovation and collaboration within the community. It is wonderful to see this leadership and vision acknowledged.”

For more information, please visit www.kioxia.com, and follow the company on X, formerly known as Twitter and LinkedIn^®. To learn more about KIOXIA’s impact on the memory and storage industry, visit the FMS website where additional information is located about the Lifetime Achievement Award recipients since 2011.

About KIOXIA America, Inc.

KIOXIA America, Inc. is the U.S.-based subsidiary of KIOXIA Corporation, a leading worldwide supplier of flash memory and solid-state drives (SSDs). From the invention of flash memory to today’s breakthrough BiCS FLASH™ 3D technology, KIOXIA continues to pioneer innovative memory, SSD and software solutions that enrich people's lives and expand society's horizons. The company's innovative 3D flash memory technology, BiCS FLASH, is shaping the future of storage in high-density applications, including advanced smartphones, PCs, SSDs, automotive, and data centers. For more information, please visit KIOXIA.com.

© 2024 KIOXIA America, Inc. All rights reserved. Information in this press release, including product pricing and specifications, content of services, and contact information is current and believed to be accurate on the date of the announcement, but is subject to change without prior notice. Technical and application information contained here is subject to the most recent applicable KIOXIA product specifications.

Notes:

1: As of August 4, 2015. KIOXIA survey.

In every mention of a KIOXIA product: Product density is identified based on the density of memory chip(s) within the Product, not the amount of memory capacity available for data storage by the end user. Consumer-usable capacity will be less due to overhead data areas, formatting, bad blocks, and other constraints, and may also vary based on the host device and application. For details, please refer to applicable product specifications. The definition of 1KB = 2¹⁰ bytes = 1,024 bytes. The definition of 1Gb = 2³⁰ bits = 1,073,741,824 bits. The definition of 1GB = 2³⁰ bytes = 1,073,741,824 bytes. 1Tb = 2⁴⁰ bits = 1,099,511,627,776 bits.

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